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PD - 94333
IRF5804
HEXFET(R) Power MOSFET
l l l l l
Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge
VDSS
-40V
RDS(on) max (m) )
198@VGS = -10V 334@VGS = -4.5V
ID
-2.5A -2.0A
Description
These P-channel HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The TSOP-6 package with its customized leadframe produces a HEXFET(R) power MOSFET with RDS(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23.
D
1 6
A D
D
2
5
D
G
3
4
S
T op V iew
TSOP-6
Absolute Maximum Ratings
Parameter
VDS ID @ TA = 25C ID @ TA= 70C IDM PD @TA = 25C PD @TA = 70C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range
Max.
-40 -2.5 -2.0 -10 2.0 1.3 0.016 20 -55 to + 150
Units
V A
W mW/C V C
Thermal Resistance
Parameter
RJA Maximum Junction-to-Ambient
Max.
62.5
Units
C/W
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1
10/04/01
IRF5804
V(BR)DSS
V(BR)DSS/TJ
FOR REVIEW ONLY
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -40 --- --- --- -1.0 2.5 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.03 --- --- --- --- --- --- --- --- 5.7 2.8 2.1 19 430 100 64 680 60 44 Max. Units Conditions --- V VGS = 0V, ID = -250A --- V/C Reference to 25C, ID = -1mA 198 VGS = -10V, ID = -2.5 m 334 VGS = -4.5V, ID = -2.0A -3.0 V VDS = VGS, ID = -250A --- S VDS = -10V, ID = -2.5A -10 VDS = -32V, VGS = 0V A -25 VDS = -32V, VGS = 0V, TJ = 70C -100 VGS = -20V nA 100 VGS = 20V 8.5 ID = -2.5A 4.2 nC VDS = -20V 3.2 VGS = -10V --- VDD = -20V --- ID = -1.0A ns --- RG = 6.0 --- VGS = -10V --- VGS = 0V --- pF VDS = -25V --- = 1kHz
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qrr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min. Typ. Max. Units --- --- --- --- --- --- --- --- 24 32 -2.5 A -10 -1.2 36 49 V ns nC
Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = -2.0A, VGS = 0V TJ = 25C, IF = -2.0A di/dt = -100A/s
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Surface mounted on 1 in square Cu board
Pulse width 400s; duty cycle 2%.
2
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FOR REVIEW ONLY
IRF5804
100
-I D , Drain-to-Source Current (A)
10
-I D , Drain-to-Source Current (A)
VGS -10V -7.0V -5.0V -4.5V -4.0V -3.7V -3.5V BOTTOM -3.0V TOP
100
10
VGS -10V -7.0V -5.0V -4.5V -4.0V -3.7V -3.5V BOTTOM -3.0V TOP
1
-3.0V
0.1
1
-3.0V 20s PULSE WIDTH Tj = 150C
0.1
20s PULSE WIDTH Tj = 25C
0.01 0.1 1 10 100
0.1
1
10
100
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
10.00
2.0
ID = -2.5A
T J = 150C
R DS(on) , Drain-to-Source On Resistance (Normalized)
-I D, Drain-to-Source Current ( )
1.5
1.00
1.0
T J = 25C
0.5
0.10 3.0 3.5
VDS = -25V 20s PULSE WIDTH
4.0 4.5 5.0
0.0 -60 -40 -20
VGS = -10V
0 20 40 60 80 100 120 140 160
-VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRF5804
10000
FOR REVIEW ONLY
-VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1 MHZ Ciss = C + C , C gs gd ds SHORTED Crss = C gd Coss = C + Cgd ds
12
ID = 2.5A
10
VDS = 32V VDS = 20V
C, Capacitance(pF)
1000
8
Ciss
6
100
Coss Crss
4
2
10 1 10 100
0 0 2 4 6 8 10
-
-VDS, Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
10
100
TJ = 150 C
-ISD , Reverse Drain Current (A)
-I D , Drain-to-Source Current (A)
OPERATION IN THIS AREA LIMITED BY R DS (on) 10
1
TJ = 25 C
100sec 1 1msec Tc = 25C Tj = 150C Single Pulse 1 10 10msec 100 1000
0.1 0.4
V GS = 0 V
0.6 0.7 0.9 1.1 1.2 1.4
0.1
-VSD ,Source-to-Drain Voltage (V)
-V DS , Drain-toSource Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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FOR REVIEW ONLY
IRF5804
VDS RD
2.5
2.0
VGS RG
D.U.T.
+
-ID , Drain Current (A)
1.5
VGS
Pulse Width 1 s Duty Factor 0.1 %
1.0
Fig 10a. Switching Time Test Circuit
0.5
td(on) tr t d(off) tf
VGS
0.0 25 50 75 100 125 150
10%
TC , Case Temperature ( C)
90%
Fig 9. Maximum Drain Current Vs. Case Temperature
VDS
Fig 10b. Switching Time Waveforms
100
Thermal Response (Z thJA )
D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1
SINGLE PULSE (THERMAL RESPONSE)
0.1 0.00001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.1 1 0.0001 0.001 0.01 10
P DM t1 t2
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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-
VDD
5
IRF5804
R DS(on) , Drain-to -Source On Resistance ( )
0.40
FOR REVIEW ONLY
0.40
R DS (on) , Drain-to-Source On Resistance ()
0.35
0.35
0.30
0.30
VGS = -4.5V
0.25
0.25
0.20
ID = -2.5A
0.20
0.15
0.15
VGS = -10V
0.10 1 2 3 4 5 6 7 8 9 10
0.10 4.0 5.0 6.0 7.0 8.0 9.0 10.0
-V GS, Gate -to -Source Voltage (V)
-I D , Drain Current (A)
Fig 12. Typical On-Resistance Vs. Gate Voltage
Fig 13. Typical On-Resistance Vs. Drain Current
Current Regulator Same Type as D.U.T.
50K
QG QGS VG QGD
12V
.2F .3F
VGS
-3mA
Charge
IG
ID
Current Sampling Resistors
Fig 14a. Basic Gate Charge Waveform
Fig 14b. Gate Charge Test Circuit
6
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+
D.U.T.
-
VDS
FOR REVIEW ONLY
IRF5804
3.0
70 60 50
VGS(th) Gate threshold Voltage (V)
2.5
Power (W)
150
ID = -250A
40 30 20 10
2.0
1.5 -75 -50 -25 0 25 50 75 100 125
0 1.00 10.00 100.00 1000.00
T J , Temperature ( C )
Time (sec)
Fig 15. Typical Threshold Voltage Vs. Junction Temperature
Fig 16. Typical Power Vs. Time
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IRF5804
TSOP-6 Package Outline
FOR REVIEW ONLY
TSOP-6 Part Marking Information
W = (1-26) IF PRECEDED BY LAS T DIGIT OF CALENDAR YEAR YEAR Y = YEAR W = WEEK PART NUMBER 2001 2002 2003 2004 2005 1996 1997 1998 1999 2000 Y 1 2 3 4 5 6 7 8 9 0 WORK WEEK 01 02 03 04 W A B C D
T OP
LOT CODE
24 25 26
X Y Z
PART NUMBER CODE REFERENCE: A = SI3443DV B = IRF5800 C = IRF5850 D = IRF5851 E = IRF5852 I = IRF5805 J = IRF5806 K = IRF5810 L = IRF5804
W = (27-52) IF PRECEDED BY A LET TER YEAR 2001 2002 2003 2004 2005 1996 1997 1998 1999 2000 Y A B C D E F G H J K WORK WEEK 27 28 29 30 W A B C D
50 51
X Y
8
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FOR REVIEW ONLY
IRF5804
TSOP-6 Tape & Reel Information
Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.10/01
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